shantou huashan electronic devices co.,ltd . silicon controlled rectifier features * repetitive peak off-state voltage : 600v * r.m.s on-state current(i t(rms) =8a) * low on-state voltage (1.3v(typ.)@ i tm ) * non-isolated type general description standard gate triggering scr is suitable for the application where requiring high bi-directional blocking voltage ca pability and also suitable for over voltage pr otection,motor control cicuit in power tool,inrush current limit circuit and heating control system. absolute maximum ratings t a =25 unless otherwise specified t stg storage temperature ------------------------------------------------------ - 40~125 t j operating junction temperature ---------------------------------------------- - 40~125 v drm repetitive peak off-state voltage ---------- ------------------- ---------------------- ----------------- 600v i t rms r.m.s on-state current 180o conduction angles ------------------------------------------8a i t(av) average on-state current (half sine wave : t c = 111 c) ----------------------------------------6.4a i tsm surge on-state current (1/2 cycle, 60hz, sine wave, non-repeti tive) -------------------------- 110a i 2 t circuit fusing consid erations(t = 8.3ms) ------------------------------------------------------------ 60a 2 s p gm forward peak gate power dissipation (t a =25 ) --------------------------------------------------- 5w p g(av) forward average gate power dissipation (t a =25 ,t=8.3ms) ---------------------------------0.5w i fgm forward peak gate current -------------------------------------------------------------------------------- 2a v rgm reverse peak gate voltage ------------------------------------------------------------------------------- 5v HCP8C60
shantou huashan electronic devices co.,ltd . electrical characteristics t a =25 unless otherwise specified symbol items min. typ. max. unit conditions i drm repetitive peak off-state current 10 200 ua v ak =v drm t c =25 t c =125 v tm peak on-state voltage (1) 1.6 v i tm =16a,tp=380s i gt gate trigger current 2 15 ma v ak =6v(dc), r l =10 ohm v gt gate trigger voltage (2) 1.5 v v ak =6v(dc), r l =10 ohm t c =25 v gd non-trigger gate voltage 0.2 v v ak =12v, r l =100 ohm t c =125 i h holding current 20 ma i t=100ma, gate open, t c =25 rth(j-c) thermal resistance 1.3 /w junction to case rth(j-a) thermal resistance 60 /w junction to ambient dv/dt critical rate of rise off-state voltage 200 v/s linear slope up to v d =v drm 67% gate open tj=125 1. forward current applied for 1 ms maximum duration,duty cycle 1%. 2. r gk current is not included in measurement performance curves figure 1 ? gate characteristics figure 2 ? maximum casetemperture gate current (ma) average on-state current (ma) HCP8C60 gate voltage (v) max. allowable case temperture (c)
shantou huashan electronic devices co.,ltd . figure 3-typical forward voltage(v) figure 4-thermal response on-state voltage (v) time (sec) figure 5-typical gate trigger voltage vs figure 6-typical gate trigger current vs junction temperature junction temperature junction temperature (c) junction temperature (c) figure 7-typical holding current figure 8-power dissipation junction temperature (c) average on-state current (a) HCP8C60 on-state current(a) transient thermal im p er d ance ( c ) max. average power dissipation (w)
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